SK Hynix to Adopt High-NA EUV for DRAM by 2028

SK Hynix reportedly plans to bring High-NA EUV lithography into DRAM mass production by 2028, aiming for more advanced nodes and defending its lead in high-value memory such as HBM. The move raises capital-spending and technical barriers; if executed well it strengthens the company's position in the next-generation memory race, supporting the stock over the medium term, though near-term depreciation and equipment costs remain a watch item.

Impact assessments are model-generated from public coverage, for reference only and not investment advice.