SK hynix Pursues EUV-Driven 6F² DRAM Scaling, Keeps 4F² and 3D DRAM in Play
TrendForce reports that SK hynix is advancing EUV-based 6F² DRAM cell scaling while keeping next-generation options such as 4F² and 3D DRAM in play. The move aims to defend its cost and density edge in leading-edge DRAM against Samsung and Micron. A diversified technology roadmap lowers single-architecture risk, though R&D and capex burdens persist, making the stock impact limited near term and modestly positive over the longer run.
Impact assessments are model-generated from public coverage, for reference only and not investment advice.